GaN Power Device Manager

1 week ago


Cambridge, Cambridgeshire, United Kingdom IC Resources Full time
About the Role

We are seeking a highly skilled GaN Device Development Director to join our team at IC Resources. As a key member of our organization, you will be responsible for leading the development of technology platforms for power device design and new technology advancements.

Key Responsibilities
  • Technology Development: Implement DOE experimental design of power semiconductor devices, tape-out solution design and acceptance, including co-development with foundries, device testing and verification, and other necessary new product verification links.
  • Experimental Data Analysis: Analyze and organize experimental data, and use innovative thinking to transform technology in R&D work into new products and intellectual property.
  • Technical Support: Provide technical support for external customers.
  • Device Simulations: Perform TCAD process and device simulations, and layout design.
Requirements

To be considered for this GaN Device Development Director position, the successful candidate will have a degree in microelectronics or electronics engineering with a proven background in Power IGBTs and other devices.



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