GaN Device Development Lead

2 months ago


Cambridge, Cambridgeshire, United Kingdom IC Resources Full time

IC Resources is seeking a highly motivated and experienced GaN Device Development Lead to join our client's team near Cambridge, UK. This is an exciting opportunity to contribute to the development of cutting-edge power semiconductor technology.

As the GaN Device Development Lead, you will play a pivotal role in building and leading a world-class team dedicated to advancing GaN device technology. You will be responsible for establishing technology platforms for power device design and driving new technology developments within the company.

Responsibilities:
  • Implement Design of Experiments (DOE) for power semiconductor devices, encompassing solution design, tape-out processes, foundry collaboration, device testing, verification, and integration with new product development workflows.
  • Analyze and interpret experimental data, leveraging innovative thinking to translate R&D advancements into marketable products and intellectual property.
  • Provide technical support to external customers, ensuring their success with our GaN devices.
  • Conduct TCAD process and device simulations, as well as layout design for optimal performance.
Qualifications:

The ideal candidate will possess a strong academic background in microelectronics or electronics engineering, coupled with proven experience in the development of Power IGBTs and other semiconductor devices. A deep understanding of GaN technology and its applications is essential for success in this role.



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