Senior Process Design and Integration Engineer for Silicon Carbide Development

7 days ago


Newport, Newport, United Kingdom EU119 Vishay Newport Ltd Full time

Be part of a talented team of engineering professionals as a Semiconductor Process Design and Integration Engineer for Silicon Carbide (SiC) development at EU119 Vishay Newport Ltd.

This position involves contributing to the success of our company by working together to develop and enable innovative wide bandgap semiconductor technology.

Key Responsibilities:

  • Design and simulation of fabrication process flow of advanced SiC Power MOSFETs.
  • Developing and defining specifications of unit processes and coordinating their development with the fabrication process team.
  • Performing electrical characterization on SiC power semiconductor devices and related PCM/TEG structures on the wafer.
  • Analyzing data to extract key device parameters, including gate oxide thickness and QBD, interface charge density, channel mobility, etc.
  • Devising process experiments for process window optimization and improving manufacturing yield.

Requirements:

  • PhD or Masters-level degree in semiconductor device/material physics.
  • At least 10 years of post-graduation experience in power semiconductor technology.
  • Rich experience in TCAD simulation for power semiconductor devices, especially WBG semiconductor.
  • Knowledge of software tools for characteristic analysis of process, i.e., MATLAB, MathCAD.
  • Excellent problem-solving skills, ability to communicate technical expertise, and effective interpersonal and teamwork skills.

Vishay Newport Ltd. offers a comprehensive suite of benefit programs, unique career paths, an open and collaborative culture, a stable business, and opportunities to work globally and locally.



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