Principal Power Semiconductor Engineer

1 week ago


Cambridge, Cambridgeshire, United Kingdom Cambridge GaN Devices Full time

Cambridge GaN Devices is a pioneering fabless semiconductor company that specializes in energy-efficient GaN-based power devices. We are seeking an experienced Senior/Principal Power Device R&D Engineer to spearhead our research and development efforts in GaN device technology.

As the successful candidate, you will be responsible for leading multi-disciplinary projects to develop innovative GaN power devices and ICs. Your expertise will drive product innovation, ensuring our solutions meet customer demands and remain ahead of the competition.

We offer a competitive salary of £100,000 - £120,000 per year, depending on experience, plus benefits including a share options scheme, pension scheme, and flexible working options.

**Main Responsibilities:**

  • Leadership of GaN power IC development projects
  • Strategic collaboration with project managers, engineers, and designers
  • Drive product innovation through technical expertise

**Qualifications:**

  • Masters degree in a relevant engineering or science subject
  • Solid experience of developing semiconductor devices, preferably power devices
  • Semiconductor industry experience
  • Expertise in power device packaging, analog ICs, power semiconductors, GaN devices, or semiconductor testing and reliability
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