Principal Power Semiconductor Engineer
1 week ago
Cambridge GaN Devices is a pioneering fabless semiconductor company that specializes in energy-efficient GaN-based power devices. We are seeking an experienced Senior/Principal Power Device R&D Engineer to spearhead our research and development efforts in GaN device technology.
As the successful candidate, you will be responsible for leading multi-disciplinary projects to develop innovative GaN power devices and ICs. Your expertise will drive product innovation, ensuring our solutions meet customer demands and remain ahead of the competition.
We offer a competitive salary of £100,000 - £120,000 per year, depending on experience, plus benefits including a share options scheme, pension scheme, and flexible working options.
**Main Responsibilities:**
- Leadership of GaN power IC development projects
- Strategic collaboration with project managers, engineers, and designers
- Drive product innovation through technical expertise
**Qualifications:**
- Masters degree in a relevant engineering or science subject
- Solid experience of developing semiconductor devices, preferably power devices
- Semiconductor industry experience
- Expertise in power device packaging, analog ICs, power semiconductors, GaN devices, or semiconductor testing and reliability
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