Silicon Carbide Process Design Expert
1 month ago
Vishay Intertechnology, a leading manufacturer of discrete semiconductors and passive electronic components, is seeking a highly skilled Silicon Carbide Process Design Expert to join our team in Newport, UK.
About the Role:
As a key member of our semiconductor development team, you will be responsible for designing and simulating fabrication process flows for advanced SiC Power MOSFETs. Your expertise in process window optimization and manufacturing yield improvement will be crucial in developing high-quality power semiconductor devices.
Key Responsibilities:
- Design and simulation of fabrication process flow for SiC Power MOSFETs
- Develop PCM/TEG structures for monitoring and evaluation of fabrication processes
- Define and develop specifications of unit processes and coordinate with fab process teams
- Electrical characterization of SiC power semiconductor devices and related PCM/TEG structures
- Data analysis to extract key device parameters
- Process experiments for process window optimization and yield improvement
Requirements:
- PhD or Masters-level degree in semiconductor device/material physics
- At least 10 years of post-graduation experience in power semiconductor technology
- Leadership experience in development projects, with project management best practices
- Rich experience in TCAD simulation for power semiconductor devices, especially WBG semiconductors
What We Offer:
Vishay offers a comprehensive suite of benefit programs, including healthcare coverage, financial support, and resources to help you achieve your personal and professional goals. We estimate a salary range of £80,000 - £110,000 per annum, depending on experience.
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