GaN Device Development Director

4 weeks ago

Cambridge Cambridgeshire, United Kingdom IC Resources Full time

Job Description

I am searching for a GaN Device Development Director for one of my esteemed clients based near Cambridge, UK.

Due to their continued success, they are looking to add a GaN Device Development Director to their team.

This person will be responsible for building technology platforms for power device design and new technology developments as well as building a world-class team who are also focused on GaN Devices.

Other responsibilities of the role include:

  • Implement DOE experimental design of power semiconductor devices, tape-out solution design and acceptance, including co-development with foundries, device testing and verification and other necessary new product verification links
  • Analyse and organize experimental data, and use innovative thinking to transform technology in R&D work into new products and intellectual property
  • Be responsible for technical support for external customers
  • Performing TCAD process and device simulations, and layout design

To be considered for this GaN Device Development Director , the successful candidates will have a degree in microelectronics or electronics engineering with a proven background in Power IGBTs and other devices.

If this GaN Development Design Director is of interest, then please apply with an up-to-date CV and contact information.

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