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Science and Engineering EPSRC ICase and IQE Funded PhD Scholarship: Next-Generation Wide-Bandgap Materials and Devices
2 months ago
Funding providers: EPSRC iCASE and IQE
Subject areas: Wide Bandgap Semiconductors, Power Electronics Devices, Advanced Materials
Project start date:
- 1 October 2024 (Enrolment open from mid-June)
Aligned programme of study: Electrical Engineering, Materials Engineering, Physics, Chemistry
Project description:
Silicon has traditionally dominated as the semiconductor for power electronics, but its inherent limitations such as narrow bandgap (and thus operating voltage) has led to an increasing focus on next-generation wider bandgap compound semiconductors with superior characteristics. Further development of GaN and SiC (and in the future Ga2O3) power devices will be transformational, enabling revolutionary changes in energy efficiency, reduced size and weight and lower overall system costs - important considerations for Net Zero and the 'electric revolution'. This project will focus on various aspects of the growth and characterisation of these wide bandgap materials and the fabrication of devices and their related performance. For newly-developed and maturing GaN and SiC materials and devices, various analytical techniques will be employed to understand the factors limiting performance to well beyond state-of-the art silicon. For next-generation Ga2O3, epitaxial materials growth via Metal Organic Chemical Vapour Deposition (MOCVD) using Swansea’s new state-of-the-art AIXTRON reactor will target the development of an even wider bandgap semiconductor with frontier properties for power electronics. This exciting iCASE PhD project with an enhanced stipend and generous research funds will be undertaken in close collaboration with (and is sponsored by) one of the world’s leading compound semiconductor epitaxy companies (IQE). It will be hosted by and use the extensive fabrication, and material/electrical characterisation facilities of the new Centre for Integrative Semiconductor Materials (CISM) – Swansea University’s flagship £55M institute for advanced semiconductor research and development. This is an outstanding opportunity for a physics, electrical engineering, materials science and engineering, or chemistry graduate to be part of the semiconductor for net zero revolution.
This studentship will also be part of an exciting new Doctoral Training Initiative called UK Semiconductor Industry Future Skills or UK-SIFS for short. UK-SIFS will create a vibrant, multi-disciplinary cohort experience for all our students and provide highly practical training of substantial value to those interested in careers in the semiconductor and related sectors such as optoelectronics and clean energy. You will also have a chance to work with a large range of industrial partners such as IQE, who will not only deliver training content but also co-supervise research and host secondments. We would particularly welcome appropriately qualified applicants with experience from other industry sectors looking to embark on a new career journey in semiconductors. If you want to undertake cutting edge research in world class facilities closely linked to the rapidly expanding UK semiconductor sector, then UK-SIFS and this PhD project is your opportunity.
Eligibility
Candidates must hold a UK bachelor’s degree with a minimum of Upper Second Class honours or overseas bachelor’s degree deemed equivalent to UK Bachelor (by UK ECCTIS) and achieved a grade equivalent to UK Upper Second Class honours, OR a master’s degree with a minimum overall grade at ‘Merit’ (or Non-UK equivalent as defined by Swansea University).
Due to funding restrictions, this scholarship is open to applicants eligible to pay tuition fees at the UK rate only.
Additional Funding Information
This scholarship covers the full cost of UK tuition fees, an annual stipend of £19,237 and a £2,500 top-up.
Additional research expenses will also be available.
